Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Overview
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NAICS
PSC
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Qualification Details
Fit reasons
- NAICS alignment with historical contract wins in similar service areas.
- Scope strongly matches core technical capabilities and delivery model.
Risks
- Past performance thresholds may require one additional teaming partner.
- Potential clarification needed on staffing minimums before bid/no-bid.
Next steps
Validate eligibility requirements, assign capture owner, and schedule partner outreach to confirm teaming strategy before submission planning.
Quick Summary
The Department of Energy (DOE), through Battelle Energy Alliance (INL), has issued a Special Notice announcing the availability for licensing of a novel technology: High-Quality Actinide Thin Films via Molecular Beam Epitaxy (MBE). This technology enables the precise deposition of high-purity, defect-free, single-crystalline thin films of uranium, thorium, and their nitrides, crucial for quantum and optoelectronic devices. Responses expressing interest are due by March 15, 2026.
Scope of Technology
Researchers at INL have developed a process utilizing Molecular Beam Epitaxy (MBE) to create high-quality epitaxial crystalline thin films of actinides. MBE is a non-equilibrium vacuum deposition technique offering precise control over material composition and interfaces, ideal for fabricating high-purity, defect-free, single-crystalline thin films. This is particularly significant for actinide materials, which present challenges for ab initio modeling due to complex electron correlations, making high-quality samples essential for model development and next-generation computing technologies.
Key Benefits
- High-Quality Thin Films: Fabrication of high-purity, defect-free, single-crystalline films of uranium, thorium, and their nitrides.
- Precise Control: Tunable growth parameters (temperature, pressure, growth rate, flux ratios) ensure high-quality materials.
- Integration with Existing Technology: Epitaxial films can be seamlessly integrated with semiconductor technology for advanced device structures.
- Advanced Modeling Support: Provides essential feedback for developing accurate ab initio models of actinide materials.
Market Applications
- Quantum Computing: Ideal for developing next-generation quantum computing devices due to unique actinide properties.
- Advanced Research: Supports theoretical and experimental research into complex electron correlations in actinide materials.
- Optoelectronics: Leverages strong electron correlations and spin-orbit coupling for advanced electronic devices.
- Semiconductor Industry: Opens possibilities for creating advanced device structures and innovations in high-tech applications.
Advantage
MBE offers significant advantages over other deposition techniques like DC sputtering, which has been used for monocrystalline actinide-nitride films. MBE is considered the pinnacle of vacuum deposition for atomically precise layers and high-purity sources. This novel application of MBE to actinide-nitrides differentiates it, providing a unique method for producing high-quality, tunable actinide thin films.
Notice & Timeline
- Type: Special Notice (Technology Licensing Opportunity)
- Department: Energy
- Office: BATTELLE ENERGY ALLIANCE–DOE CNTR
- Place of Performance: Idaho Falls, ID, United States
- Response Due: March 15, 2026, 06:00 AM EST
- Published: February 03, 2026, 08:40 PM EST
Contact Information
For inquiries, contact Javier Martinez at javier.martinez@inl.gov.