Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
Overview
Buyer
Place of Performance
NAICS
PSC
Set Aside
Original Source
Timeline
Qualification Details
Fit reasons
- NAICS alignment with historical contract wins in similar service areas.
- Scope strongly matches core technical capabilities and delivery model.
Risks
- Past performance thresholds may require one additional teaming partner.
- Potential clarification needed on staffing minimums before bid/no-bid.
Next steps
Validate eligibility requirements, assign capture owner, and schedule partner outreach to confirm teaming strategy before submission planning.
Quick Summary
The Department of Energy's Idaho National Laboratory (INL) is offering a technology for licensing: a process to create High-Quality Actinide Thin Films using Molecular Beam Epitaxy (MBE). This innovation is crucial for developing next-generation quantum and optoelectronic devices, supporting advanced research, and integrating with existing semiconductor technology. Responses are due May 15, 2026.
Technology Overview
Researchers at INL have developed a novel MBE process to deposit high-purity, defect-free, single-crystalline thin films of uranium and thorium, as well as their nitrides. MBE allows for precise control over material composition and interfaces, enabling the formation of high-quality materials by tuning growth parameters like temperature, pressure, and flux ratios. This technique addresses the challenge of modeling complex electron correlations in actinide materials by providing essential high-quality samples.
Key Benefits & Market Applications
- High-Quality Thin Films: Fabrication of high-purity, defect-free, single-crystalline actinide films.
- Precise Control: Tunable growth parameters for tailored material properties.
- Integration: Seamless integration with existing semiconductor technology for advanced device structures.
- Advanced Modeling Support: Provides critical feedback for accurate ab initio models.
Market applications include:
- Quantum Computing: Harnessing unique actinide properties for next-generation devices.
- Advanced Research: Studying complex electron correlations in actinide materials.
- Optoelectronics: Developing advanced electronic devices leveraging strong electron correlations and spin-orbit coupling.
- Semiconductor Industry: Opening new possibilities for advanced device structures.
Competitive Advantage
MBE is considered a superior vacuum deposition technique, offering atomically precise layers and high-purity sources. This technology represents a novel application of MBE for actinide-nitrides, differentiating it from existing methods like DC sputtering and providing a unique advantage in producing tunable, high-quality actinide thin films.
Opportunity Details
- Type: Special Notice (Licensing Opportunity)
- Agency: Department of Energy, Idaho National Laboratory (INL)
- Product/Service Code: AJ12 (General Science And Technology R&D Services; Applied Research)
- Response Due: May 15, 2026
- Published: April 13, 2026
- Set-Aside: None specified
- Contact: Javier Martinez (javier.martinez@inl.gov)