Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies

SOL #: BA-1552Special Notice

Overview

Buyer

Energy
Energy, Department Of
BATTELLE ENERGY ALLIANCE–DOE CNTR
Idaho Falls, ID, 83415, United States

Place of Performance

Idaho Falls, ID

NAICS

Semiconductor and Related Device Manufacturing (334413)

PSC

General Science & Technology R&D Svcs; General Science & Technology; Experimental Development (AJ13)

Set Aside

No set aside specified

Timeline

1
Posted
Mar 4, 2026
2
Action Date
Apr 20, 2026, 6:00 AM

Qualification Details

Fit reasons
  • NAICS alignment with historical contract wins in similar service areas.
  • Scope strongly matches core technical capabilities and delivery model.
Risks
  • Past performance thresholds may require one additional teaming partner.
  • Potential clarification needed on staffing minimums before bid/no-bid.
Next steps

Validate eligibility requirements, assign capture owner, and schedule partner outreach to confirm teaming strategy before submission planning.

Quick Summary

The Idaho National Laboratory (INL), managed by Battelle Energy Alliance, is offering a licensing opportunity for its innovative High-Quality Superconducting ZrN Thin Films technology. This advancement, developed via Molecular Beam Epitaxy (MBE), is crucial for Quantum Computing and other advanced superconducting applications. The technology offers superior quality and methods for inducing unconventional superconductivity. Responses are due by April 20, 2026.

Technology Overview

INL researchers have established precise parameters for depositing high-quality superconducting zirconium nitride (ZrN) using Molecular Beam Epitaxy (MBE). This includes optimizing growth rate, temperature, Zr/N flux ratios, and substrate choice to achieve superior crystalline quality. Novel methods have also been conceptualized to induce unconventional superconductivity in ZrN, potentially enabling more fault-tolerant computing.

Key Benefits

  • Superior Quality: MBE allows for fine-tuned growth parameters, resulting in top-quality, single-crystal ZrN superconducting films.
  • Unconventional Superconductivity: Methods for inducing unconventional superconductivity in ZrN have been conceptualized, potentially enabling more fault-tolerant computing.
  • Novel Application: ZrN has not previously been deposited using MBE, offering a unique advantage over existing polycrystalline superconducting thin films.
  • Tunable Properties: Precise control during deposition minimizes impurities and defects, enabling better performance and higher critical temperatures. Direct control of stoichiometry allows for tunable performance metrics.

Market Applications

  • Quantum Computing: Platforms for superconducting qubits.
  • Epitaxial Superconducting Heterostructures: Creation of advanced structures for unconventional superconducting technologies with atomic layer precision.
  • Research and Development: Advancing superconducting materials and their applications.
  • Fault-Tolerant Computing: Leading to more robust computing systems.

Opportunity Details

  • Type: Special Notice (Licensing Opportunity)
  • Response Due: April 20, 2026, 06:00 AM UTC
  • Published: March 04, 2026, 08:30 PM UTC
  • Set-Aside: None specified (as this is a licensing opportunity, not a procurement)
  • Product/Service Code: AJ13 (General Science & Technology R&D Svcs; Experimental Development)
  • Place of Performance: Idaho Falls, ID, United States

Contact Information

For inquiries, contact Javier Martinez at javier.martinez@inl.gov.

People

Points of Contact

Javier MartinezPRIMARY

Files

Files

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Versions

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Special Notice
Posted: Mar 4, 2026
Available for Licensing:High-Quality Superconducting ZrN Thin Films via Molecular Beam Epitaxy for Quantum Computing and Advanced Superconducting Technologies | GovScope