Silicon and Silicon/Germanium Epitaxial Wafers
Overview
Buyer
Place of Performance
NAICS
PSC
Set Aside
Original Source
Timeline
Qualification Details
Fit reasons
- NAICS alignment with historical contract wins in similar service areas.
- Scope strongly matches core technical capabilities and delivery model.
Risks
- Past performance thresholds may require one additional teaming partner.
- Potential clarification needed on staffing minimums before bid/no-bid.
Next steps
Validate eligibility requirements, assign capture owner, and schedule partner outreach to confirm teaming strategy before submission planning.
Quick Summary
The National Institute of Standards and Technology (NIST) is soliciting quotations for Silicon and Silicon/Germanium Epitaxial Wafers to support its CHIPS Metrology program. This Total Small Business Set-Aside aims to procure high-quality epitaxial film stacks on 100mm double-side polished silicon wafers. Quotations are due May 12, 2026, at 5:00 PM ET.
Purpose & Scope
NIST requires specialized silicon and silicon/germanium epitaxial wafers to advance metrology capabilities for the U.S. semiconductor manufacturing ecosystem. This Request for Quotations (RFQ) seeks commercial items to address critical metrology gaps, focusing on high-quality epitaxial film stacks.
Key Requirements & Deliverables
The procurement includes several line items for "Thin" and "Thick" wafers with specific silicon and silicon/germanium layer compositions, thicknesses, and dopant levels. Vendors must source their own 100mm double-side polished (DSP) epi substrate wafers.
- Mandatory Line Items (CLINs 0001 & 0002): "Thin" Si and SiGe layers on Si, with specific compositions (e.g., Si0.70Ge0.30 ± 0.05 atomic percent tolerance) and dopant levels (Boron, Phosphorus). Quantity: 15 wafers each.
- Optional Line Items (CLINs 0003-0007):
- CLIN 0003: "Thin" doped Si on Si, allowing up to 5 layers of doped silicon for reference materials in dopant quantification metrology (SIMS and APT).
- CLIN 0004: "Thick" doped Si on Si, limited to a single doped layer.
- CLIN 0005: Isotopically enriched 28Si on Si.
- CLIN 0006: "Thin" Si and SiGe layers on Si, configurable with up to 50 layers (250 nm max thickness) and multiple Ge compositions.
- CLIN 0007: "Thick" SiGe on buffered Si, involving fully relaxed (cubic) SiGe grown on a virtual substrate, processed to form SiGe on insulator wafers.
- Data Requirements: Secondary Ion Mass Spectroscopy (SIMS) and Spreading Resistance Profiling (SRP) data for each lot of wafers must be available.
- Delivery: Within 20 weeks of award.
Contract Details
- Contract Type: Request for Quotations (RFQ) leading to a purchase order.
- Set-Aside: 100% Total Small Business Set-Aside.
- NAICS Code: 334413 - Semiconductor and Related Device Manufacturing (Small Business Size Standard: 1250 employees).
- Option Validity: Optional line items (0003-0007) are valid for three years after acceptance of CLINs 0001 and 0002.
Submission & Evaluation
- Offer Due Date: May 12, 2026, at 5:00 PM ET.
- Submission Requirements: Firm-fixed price quotations for all line items, demonstrating ability to meet or exceed minimum specifications. A completed copy of all required solicitation provisions is necessary.
- Eligibility: An active System for Award Management (SAM) registration is required for technical evaluation.
- Award Basis: Lowest Price Technically Acceptable (LPTA). Price will be evaluated for technical acceptability, then for overall fairness and reasonableness.
Contact Information
For solicitation inquiries, contact Erik Frycklund at erik.frycklund@nist.gov.